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| HCS27MS September 1995 Radiation Hardened Triple 3-Input NOR Gate Pinouts 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T14, LEAD FINISH C TOP VIEW A1 1 B1 2 A2 3 B2 4 C2 5 Y2 6 GND 7 14 VCC 13 C1 12 Y1 11 C3 10 B3 9 A3 8 Y3 Features * 3 Micron Radiation Hardened SOS CMOS * Total Dose 200K RAD (Si) * SEP Effective LET No Upsets: >100 MEV-cm2/mg * Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) * Dose Rate Survivability: >1 x 1012 RAD (Si)/s * Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse * Latch-Up Free Under Any Conditions * Military Temperature Range: -55oC to +125oC * Significant Power Reduction Compared to LSTTL ICs * DC Operating Voltage Range: 4.5V to 5.5V * Input Logic Levels - VIL = 30% of VCC Max - VIH = 70% of VCC Min * Input Current Levels Ii 5A at VOL, VOH 14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP3-F14, LEAD FINISH C TOP VIEW A1 B1 A2 B2 C2 Y2 GND 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VCC C1 Y1 C3 B3 A3 Y3 Description The Intersil HCS27MS is a Radiation Hardened Triple 3-Input NOR Gate. A Low on all inputs forces the output to a High state. The HCS27MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS27MS is supplied in a 14 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix). Functional Diagram (1, 3, 9) An (2, 4, 10) Bn (13, 5, 11) Cn (12, 6, 8) Yn Ordering Information PART NUMBER HCS27DMSR TEMPERATURE RANGE -55oC to +125oC SCREENING LEVEL Intersil Class S Equivalent Intersil Class S Equivalent Sample PACKAGE TRUTH TABLE 14 Lead SBDIP An HCS27KMSR -55oC to +125oC 14 Lead Ceramic Flatpack 14 Lead SBDIP L L HCS27D/ Sample HCS27K/ Sample HCS27HMSR +25oC L L +25oC Sample 14 Lead Ceramic Flatpack Die H H +25oC Die H H INPUTS Bn L L H H L L H H Cn L H L H L H L H OUTPUTS Yn H L L L L L L DB NA L NOTE: L = Logic Level Low, H = Logic level High CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999 Spec Number File Number 63 518766 3054.1 Specifications HCS27MS Absolute Maximum Ratings Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .25mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 Reliability Information Thermal Resistance JA JC SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W Ceramic Flatpack Package . . . . . . . . . . . 116oC/W 30oC/W Maximum Package Power Dissipation at +125oC Ambient SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/oC Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.6mW/oC CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation. Operating Conditions Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Input Rise and Fall Times at 4.5V VCC (tr, tf) . . . . . . 100ns/V Max. Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% to VCC Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 70% of VCC to VCC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2, 3 Output Current (Sink) IOL VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0V 1 2, 3 Output Current (Source) IOH VCC = 4.5V, VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0V VCC = 4.5V, VIH = 3.15V, IOL = 50A, VIL = 1.35V VCC = 5.5V, VIH = 3.85V, IOL = 50A, VIL = 1.65V Output Voltage High VOH VCC = 4.5V, VIH = 3.15V, IOH = -50A, VIL = 1.35V VCC = 5.5V, VIH = 3.85V, IOH = -50A, VIL = 1.65V Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND 1 2, 3 1, 2, 3 LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC MIN 4.8 4.0 -4.8 -4.0 MAX 10 200 0.1 UNITS A A mA mA mA mA V PARAMETER Quiescent Current SYMBOL ICC (NOTE 1) CONDITIONS VCC = 5.5V, VIN = VCC or GND Output Voltage Low VOL 1, 2, 3 +25oC, +125oC, -55oC - 0.1 V 1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 VCC -0.1 - - V 1, 2, 3 +25oC, +125oC, -55oC - V 1 2, 3 +25oC +125oC, -55oC +25oC, +125oC, -55oC 0.5 5.0 - A A - Noise Immunity Functional Test FN VCC = 4.5V, VIH = 0.70(VCC), VIL = 0.30(VCC), (Note 2) 7, 8A, 8B NOTES: 1. All voltages reference to device GND. 2. For functional tests VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0". Spec Number 64 518766 Specifications HCS27MS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 9 10, 11 Input to Yn TPLH VCC = 4.5V 9 10, 11 NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC. LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC MIN 2 2 2 2 MAX 18 20 20 22 UNITS ns ns ns ns PARAMETER Input to Yn SYMBOL TPHL (NOTES 1, 2) CONDITIONS VCC = 4.5V TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Capacitance Power Dissipation SYMBOL CPD CONDITIONS VCC = 5.0V, f = 1MHz NOTES 1 1 Input Capacitance CIN VCC = 5.0V, f = 1MHz 1 1 Output Transition Time TTHL TTLH VCC = 4.5V 1 1 NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC MIN MAX 24 27 10 10 15 22 UNITS pF pF pF pF ns ns TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K RAD LIMITS PARAMETER Quiescent Current Output Current (Sink) SYMBOL ICC IOL (NOTES 1, 2) CONDITIONS VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V VCC = 4.5V, VIN = VCC or GND, VOUT = VCC -0.4V VCC = 4.5V and 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC), IOL = 50A VCC = 4.5V and 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC), IOH = -50A VCC = 5.5V, VIN = VCC or GND TEMPERATURE +25oC +25oC MIN 4.0 MAX 0.2 UNITS mA mA Output Current (Source) Output Voltage Low IOH +25oC -4.0 - mA VOL +25oC - 0.1 V Output Voltage High VOH +25oC VCC -0.1 - - V Input Leakage Current IIN +25oC 5 A Spec Number 65 518766 Specifications HCS27MS TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) 200K RAD LIMITS PARAMETER Noise Immunity Functional Test Input to Yn SYMBOL FN (NOTES 1, 2) CONDITIONS VCC = 4.5V, VIH = 0.70(VCC), VIL = 0.30(VCC), (Note 3) VCC = 4.5V VCC = 4.5V TEMPERATURE +25oC MIN MAX UNITS - TPHL TPLH +25oC +25oC 2 2 20 22 ns ns NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC. 3. For functional tests VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0". TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP B SUBGROUP 5 5 PARAMETER ICC IOL/IOH DELTA LIMIT 3A -15% of 0 Hour TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 METHOD 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 Sample/5005 Sample/5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroups 1, 2, 3, 9, 10, 11, (Note 2) ICC, IOL/H READ AND RECORD ICC, IOL/H ICC, IOL/H ICC, IOL/H Subgroup B-6 Group D NOTES: Sample/5005 Sample/5005 1, 7, 9 1, 7, 9 1. Alternate Group A inspection in accordance with Method 5005 of MIL-STD-883 may be exercised. 2. Table 5 parameters only. Spec Number 66 518766 Specifications HCS27MS TABLE 7. TOTAL DOSE IRRADIATION TEST CONFORMANCE GROUPS Group E Subgroup 2 NOTE: 1. Except FN test which will be performed 100% Go/No-Go. METHOD 5005 PRE RAD 1, 7, 9 POST RAD Table 4 READ AND RECORD PRE RAD 1, 9 POST RAD Table 4 (Note 1) TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN GROUND 1/2 VCC = 3V 0.5V VCC = 6V 0.5V 50kHz 25kHz STATIC BURN-IN I TEST CONDITIONS (Note 1) 6, 8, 12 1 - 5, 7, 9, 10, 11, 13 14 - STATIC BURN-IN II TEST CONNECTIONS (Note 1) 6, 8, 12 7 1 - 5, 9, 10, 11, 13, 14 - DYNAMIC BURN-IN TEST CONNECTIONS (Note 2) NOTES: 1. Each pin except VCC and GND will have a resistor of 10K 5% for static burn-in. 2. Each pin except VCC and GND will have a resistor of 1K 5% for dynamic burn-in. 7 6, 8, 12 14 1 - 5, 9, 10, 11, 13 - TABLE 9. IRRADIATION TEST CONNECTIONS OPEN 6, 8, 12 GROUND 7 VCC = 5V 0.5V 1 - 5, 9, 10, 11, 13, 14 NOTE: Each pin except VCC and GND will have a resistor of 47K 5% for irradiation testing. Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures. Spec Number 67 518766 HCS27MS Intersil Space Level Product Flow - `MS' Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method 2011 Sample - Die Shear Monitor, Method 2019 or 2027 100% Internal Visual Inspection, Method 2010, Condition A 100% Temperature Cycle, Method 1010, Condition C, 10 Cycles 100% Constant Acceleration, Method 2001, Condition per Method 5004 100% PIND, Method 2020, Condition A 100% External Visual 100% Serialization 100% Initial Electrical Test (T0) 100% Static Burn-In 1, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% Interim Electrical Test 1 (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In 2, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% Interim Electrical Test 2 (T2) 100% Delta Calculation (T0-T2) 100% PDA 1, Method 5004 (Notes 1and 2) 100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or Equivalent, Method 1015 100% Interim Electrical Test 3 (T3) 100% Delta Calculation (T0-T3) 100% PDA 2, Method 5004 (Note 2) 100% Final Electrical Test 100% Fine/Gross Leak, Method 1014 100% Radiographic, Method 2012 (Note 3) 100% External Visual, Method 2009 Sample - Group A, Method 5005 (Note 4) 100% Data Package Generation (Note 5) NOTES: 1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1. 2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. 5. Data Package Contents: * Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quantity). * Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage. * GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Intersil. * X-Ray report and film. Includes penetrometer measurements. * Screening, Electrical, and Group A attributes (Screening attributes begin after package seal). * Lot Serial Number Sheet (Good units serial number and lot number). * Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. * The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative. Spec Number 68 518766 HCS27MS AC Timing Diagrams VIH VS VIL TPLH TPHL VOH VS VOL TTLH 80% VOL 20% 80% 20% TTHL OUTPUT CL = 50pF RL = 500 INPUT CL RL AC Load Circuit DUT TEST POINT VOH OUTPUT AC VOLTAGE LEVELS PARAMETER VCC VIH VS VIL GND HCS 4.50 4.50 2.25 0 0 UNITS V V V V V All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Spec Number 69 518766 HCS27MS Die Characteristics DIE DIMENSIONS: 87 x 88 mils 2.20 x 2.24mm METALLIZATION: Type: SiAl Metal Thickness: 11kA 1kA GLASSIVATION: Type: SiO2 Thickness: 13kA 2.6kA WORST CASE CURRENT DENSITY: <2.0 x 105A/cm2 BOND PAD SIZE: 100m x 100m 4 mils x 4 mils Metallization Mask Layout HCS27MS A1 (1) VCC (14) C1 (13) B1 (2) (12) Y1 (11) C3 A2 (3) B2 (4) (10) B3 C2 (5) (9) A3 (6) Y2 (7) GND (8) Y3 Spec Number 70 518766 |
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